Browse Standards

4331+ standards in database

4331 result(s) found

GB/T 24460-2009 Abolished

太阳能光伏照明装置总技术规范

Generic technical specificationg of solar photovoltaic( PV) lighting installation

ICS: 29.140
2010-12-01
GB/T 24533-2009 Abolished

锂离子电池石墨类负极材料

Graphite negative electrode materials for lithium ion battery

ICS: 29.050
2010-05-01
GB/T 14139-2009 Abolished

硅外延片

Silicon epitaxial wafers

ICS: 29.045
2010-06-01
GB/T 11072-2009 Active

锑化铟多晶、单晶及切割片

Indium antimonide polycrystal,single crystals and as-cut slices

ICS: 29.045
2010-06-01
GB/T 6616-2009 Abolished

半导体硅片电阻率及硅薄膜薄层电阻测试方法 非接触涡流法

Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge

ICS: 29.045
2010-06-01
GB/T 6619-2009 Active

硅片弯曲度测试方法

Test methods for bow of silicon wafers

ICS: 29.045
2010-06-01
GB/T 6620-2009 Active

硅片翘曲度非接触式测试方法

Test method for measuring warp on silicon slices by noncontact scanning

ICS: 29.045
2010-06-01
GB/T 24581-2009 Abolished

低温傅立叶变换红外光谱法测量硅单晶中III、V族杂质含量的测试方法

Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities

ICS: 29.045
2010-06-01
GB/T 24580-2009 Active

重掺n型硅衬底中硼沾污的二次离子质谱检测方法

Test method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

ICS: 29.045
2010-06-01
GB/T 24579-2009 Active

酸浸取 原子吸收光谱法测定多晶硅表面金属污染物

Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy

ICS: 29.045
2010-06-01
GB/T 24577-2009 Active

热解吸气相色谱法测定硅片表面的有机污染物

Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography

ICS: 29.045
2010-06-01
GB/T 24576-2009 Active

高分辩率X射线衍射测量GaAs衬底生长的AlGaAs中Al成分的试验方法

Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction

ICS: 29.045
2010-06-01
GB/T 24575-2009 Active

硅和外延片表面Na、Al、K和Fe的二次离子质谱检测方法

Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry

ICS: 29.045
2010-06-01
GB/T 24574-2009 Active

硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法

Test methods for photoluminescence analysis of single crystal silicon for III-V impurities

ICS: 29.045
2010-06-01
GB/T 1558-2009 Abolished

硅中代位碳原子含量 红外吸收测量方法

Test method for substitutional atomic carbon concent of silicon by infrared absorption

ICS: 29.045
2010-06-01
GB/T 1551-2009 Abolished

硅单晶电阻率测定方法

Test method for measuring resistivity of monocrystal silicon

ICS: 29.045
2010-06-01
GB/T 14144-2009 Active

硅晶体中间隙氧含量径向变化测量方法

Testing method for determination of radial interstitial oxygen variation in silicon

ICS: 29.045
2010-06-01
GB/T 13388-2009 Active

硅片参考面结晶学取向X射线测试方法

Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques

ICS: 29.045
2010-06-01
GB/T 13387-2009 Active

硅及其他电子材料晶片参考面长度测量方法

Test method for measuring flat length wafers of silicon and other electronic materials

ICS: 29.045
2010-06-01
GB/T 24529-2009 Abolished

炭素材料显气孔率的测定方法

Carbon materials-determination of open porosity

ICS: 29.050
2010-05-01
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