GB/T 24574-2009
ActiveTest methods for photoluminescence analysis of single crystal silicon for III-V impurities
硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法
🔗 Related Standards / 同类标准
GB/T 16596-1996
Specification for establishing a wafer coordinatesystem
GB/T 16595-1996
Specification for a universal wafer grid
GB/T 12964-2003
Monocrystalline silicon polished wafers
GB/T 20230-2006
Indium phosphide single crystal
GB/T 20229-2006
Gallium phosphide single crystal
GB/T 20228-2006
Gallium arsenide single crystal
GB/T 11069-2006
High purity germanium dioxide
GB/T 11094-2007
Horizontal bridgman grown gallium arsenide single crystal and cutting wafer