GB/T 33657-2017

Active

Nanotechnologies—Electrical operating parameter test specification of wafer level nano-scale phase change memory cells

纳米技术晶圆级纳米尺度相变存储单元电学操作参数测试规范

Standard Type

GBT

ICS

31.200

CCS

L56

Status

现行

Issue Date

2017-05-12

Implementation

2017-12-01

Responsible Dept

中国科学院

Drafting Unit

N/A

🔗 Related Standards / 同类标准

GB/Z 43510-2023 Integrated circuit TSV 3D package reliability test methods guideline GB/T 4855-1984 Families and products of linear amplifier for semiconductor integrated circuits GB/T 3434-1986 Families and products of ECL circuits for semiconductor integrated circuits GB/T 3431.2-1986 Letter symbols for semiconductor integrated circuits--Letter symbols for function of pins GB/T 6648-1986 Blank detail specification for semiconductor inte-grated circuit static read/write memories GB/T 6814-1986 Families and variety ofsemiconductor integrated non-linear circuits--Variety of analog switch GB/T 6813-1986 Families and variety ofsemiconductor integrated non-linear circuits--Variety of timers GB/T 6815-1986 Families and variety of semiconductor integrated non-linear circuits--Variety of phase-locked loop