JB/T 11206

硅压阻式微型、薄型压力传感器

硅压阻式微型、薄型压力传感器

Standard Type
JBT
ICS
17.100
CCS
N11
Status
N/A
Issue Date
2011-08-15
Implementation
N/A
Responsible Dept
中华人民共和国工业和信息化部
Drafting Unit
N/A

📋 Scope / 适用范围 ai_extracted

This standard specifies the terms and definitions, product classification, basic parameters, requirements, test methods, inspection rules, marking, packaging, transportation, and storage for silicon piezoresistive miniature and thin pressure sensors. This standard applies to the production, use, and acceptance of silicon piezoresistive miniature and thin pressure sensors (hereinafter referred to as sensors).

本标准规定了硅压阻式微型、薄型压力传感器的术语和定义、产品分类、基本参数、要求、试验方 法、检验规则、标志、包装、运输及贮存。 本标准适用于硅压阻式微型、薄型压力传感器(以下简称传感器)的生产、使用、验收等。

📝 Foreword / 前言 ai_extracted

This standard was drafted in accordance with the rules given in GB/T 1.1—2009. Please note that certain contents of this document may involve patents. The issuing authority of this document shall not be held responsible for identifying these patents. This standard was proposed by the China Machinery Industry Federation. This standard was under the jurisdiction of the Mechanical Industry Instrumentation Components Standardization Technical Committee (CMIF/TC17). This standard was drafted by: Kunshan Shuangqiao Sensor Measurement and Control Technology Co., Ltd., Shenyang Academy of Instrumentation Science, National Engineering Research Center for Sensors, and National Quality Supervision and Inspection Center for Instrumentation Components. Main drafters of this standard: You Caihong, Wang Bing, Liu Qin, Liu Bo, Wang Wenxiang, Xu Qiuling, Kuang Shi, Li Ying, Li Yanfu. This standard is published for the first time. Free download from www.gb99.cn JB/T 11206—2011

本标准按照GB/T 1.1—2009给出的规则起草。 请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别这些专利的责任。 本标准由中国机械工业联合会提出。 本标准由机械工业仪器仪表元器件标准化技术委员会(CMIF/TC17)归口。 本标准起草单位:昆山双桥传感器测控技术有限公司、沈阳仪表科学研究院、传感器国家工程研究 中心、国家仪器仪表元器件质量监督检验中心。 本标准主要起草人:尤彩红、王冰、刘沁、刘波、王文襄、徐秋玲、匡石、李颖、李延夫。 本标准为首次发布。 国标久久 www.gb99.cn 免费下载 JB/T 11206—2011

📚 References & Relations / 引用与关联

normative_reference GB/T 13384-2008
normative_reference GB/T 15478
normative_reference GB/T 2423.10-2008
normative_reference GB/T 2423.15-2008
normative_reference GB/T 2423.22-2002
normative_reference GB/T 2423.3-2006
normative_reference GB/T 2423.5-1995
normative_reference GB/T 2829-2002
normative_reference GB/T 7665-2005
normative_reference GB/T 7666-2005
normative_reference GB/T2423.1-2008
normative_reference GB/T2423.2-2008
normative_reference JB/T 6172-2005
normative_reference JB/T 9329-1999
normative_reference JJG 624-2005

📖 Terms & Definitions / 术语和定义 ai_extracted

原位测压 in situ measure pressure / in situ pressure measurement
为保证如实反应被测动态压力变化的波形,传感器力敏元件应安装在测压点处的测量方式。
To ensure that the waveform of the measured dynamic pressure change is accurately reflected, the sensor's force-sensitive element should be installed at the pressure measurement point in the measurement method.
微型压力传感器 miniature pressure sensor / miniature pressure sensor
在小流场空间的原位测压中,基本不影响流场模型,不产生湍流要求,通常采用微机械加工及微封 装技术制作的径向尺寸为毫米级的压力传感器。
In the in-situ pressure measurement of small flow field spaces, to essentially avoid affecting the flow field model and meet the requirement of not generating turbulence, pressure sensors with radial dimensions at the millimeter level, fabricated using micromachining and micro-packaging technologies, are typically employed.
薄型压力传感器 thin line pressure sensor / thin line pressure sensor
在表面流场的原位测压中,基本不影响流场模型,不产生湍流要求,通常采用微机械加工及微封装 技术制作的厚度尺寸为毫米级的压力传感器。 国标久久 www.gb99.cn 免费下载 JB/T 11206—2011 2
In in-situ pressure measurement of surface flow fields, pressure sensors with thickness dimensions at the millimeter level, fabricated using micromachining and micro-packaging technologies, are typically employed to essentially avoid affecting the flow field model and to meet the requirement of not generating turbulence. National Standard Long-lasting www.gb99.cn Free Download JB/T 11206—2011 2
筛网 screen / screen
为使传感器硅基力敏薄膜免受高速固体微粒侵入损伤及热光传导影响,紧靠薄膜前方安装的一薄层 筛状金属帽罩。筛孔形状可以是多种形式的。
To protect the silicon-based pressure-sensitive thin film of the sensor from damage caused by high-speed solid particle intrusion and the effects of thermal and optical conduction, a thin-layer sieve-like metal cap is installed immediately in front of the thin film. The shape of the sieve holes can take various forms.

🔗 Related Standards / 同类标准

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