GB/T 6590-1998

Active

Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)，ambient or case-rated，up to 100A

半导体器件分立器件第6部分:闸流晶体管第二篇 100A以下环境或管壳额定的双向三极闸流晶体管空白详细规范

Standard Type

GBT

ICS

31.080.20

CCS

L43

Status

现行

Issue Date

1998-11-17

Implementation

1999-06-01

Responsible Dept

工业和信息化部（电子）

Drafting Unit

N/A

🔗 Related Standards / 同类标准

GB/Z 107-2025 Semiconductor devices—Scan based ageing level estimation for semiconductor devices GB/Z 102.17-2026 Semiconductor devices—Discrete devices—Part 17: Magnetic and capacitive coupler for basic and reinforced insulation GB/T 6256-1986 Blank detail specification forindustrial heating triodes GB/T 7581-1987 Dimensions of outlines for semiconductor discrete devices GB/T 9432-1988 Blank detail specification for industrial heating tetrode GB/T 249-1989 The rule of type designation for discrete semiconductor devices GB/T 12300-1990 Test methods of safe operating area for power transistors GB/T 12847-1991 Blank detail specification for hydrogen thyratrons