GB/T 6219-1998

Active

Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz

半导体器件分立器件第8部分:场效应晶体管第一篇 1 GHz、5 W以下的单栅场效应晶体管空白详细规范

Standard Type

GBT

ICS

31.080.30

CCS

L42

Status

现行

Issue Date

1998-11-17

Implementation

1999-06-01

Responsible Dept

工业和信息化部（电子）

Drafting Unit

工业和信息化部（电子）

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