GB/T 29849-2013

Active

Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry

光伏电池用硅材料表面金属杂质含量的电感耦合等离子体质谱测量方法

Standard Type

GBT

ICS

29.045

CCS

H82

Status

现行

Issue Date

2013-11-12

Implementation

2014-04-15

Responsible Dept

国家标准委

Drafting Unit

N/A

🔗 Related Standards / 同类标准

GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11069-2006 High purity germanium　dioxide GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single　crystal and cutting wafer