GB/T 14863-2013

Abolished

Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes

用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法

Standard Type

GBT

ICS

29.045

CCS

H80

Status

废止

Issue Date

2013-12-31

Implementation

2014-08-15

Responsible Dept

工业和信息化部（电子）

Drafting Unit

N/A

🔗 Related Standards / 同类标准

GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11069-2006 High purity germanium　dioxide GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single　crystal and cutting wafer