GB/T 13389-2014

Active

Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon

掺硼掺磷掺砷硅单晶电阻率与掺杂剂浓度换算规程

Standard Type

GBT

ICS

29.045

CCS

H80

Status

现行

Issue Date

2014-12-31

Implementation

2015-09-01

Responsible Dept

国家标准委

Drafting Unit

N/A

🔗 Related Standards / 同类标准

GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11069-2006 High purity germanium　dioxide GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single　crystal and cutting wafer