Home / Standards / GB/T 41751-2022 GB/T 41751-2022 Active Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers 氮化镓单晶衬底片晶面曲率半径测试方法 Standard Type GBT ICS 77.040 CCS H21 Status 现行 Issue Date 2022-10-14 Implementation 2023-02-01 Responsible Dept 国家标准委 Drafting Unit N/A