Home / Standards / GB/T 33657-2017 GB/T 33657-2017 Active Nanotechnologies—Electrical operating parameter test specification of wafer level nano-scale phase change memory cells 纳米技术 晶圆级纳米尺度相变存储单元电学操作参数测试规范 Standard Type GBT ICS 31.200 CCS L56 Status 现行 Issue Date 2017-05-12 Implementation 2017-12-01 Responsible Dept 中国科学院 Drafting Unit N/A