GB/T 29332-2012

Active

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT)

半导体器件 分立器件 第9部分:绝缘栅双极晶体管(IGBT)

Standard Type
GBT
ICS
31.080.30;31.080.01
CCS
L42
Status
现行
Issue Date
2012-12-31
Implementation
2013-06-01
Responsible Dept
工业和信息化部(电子)
Drafting Unit
N/A