Browse Standards

1450+ standards in database

1450 result(s) found

GB/T 18663.6-2026 即将实施

电气和电子设备机械结构 公制系列和英制系列的试验 第6部分:户内机柜的安全要求

Mechanical structures for electrical and electronic equipment—Tests for metric and inch system—Part 6: Security aspects for indoor cabinets

ICS: 31.240
2026-09-01
GB/T 40815.6-2026 即将实施

电气和电子设备机械结构 符合英制系列和公制系列机柜的热管理 第6部分:户内机柜的空气再循环和旁路

Mechanical structures for electrical and electronic equipment—Thermal management for cabinets in accordance with inch and metric system—Part 6: Air recirculation and bypass of indoor cabinets

ICS: 31.240
2026-09-01
GB/T 47239.9-2026 即将实施

半导体器件 柔性可拉伸半导体器件 第9部分:一晶体管一电阻式(1T1R)电阻存储单元性能测试方法

Semiconductor devices—Flexible and stretchable semiconductor devices—Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells

ICS: 31.080.99
2026-09-01
GB/T 47240.4-2026 即将实施

半导体器件 人体通信半导体接口 第4部分:胶囊内窥镜

Semiconductor devices—Semiconductor interface for human body communication—Part 4: Capsule endoscope

ICS: 31.080.01
2026-09-01
GB/T 47240.1-2026 即将实施

半导体器件 人体通信半导体接口 第1部分:总则

Semiconductor devices—Semiconductor interface for human body communication—Part 1: General requirements

ICS: 31.080.01
2026-09-01
GB/T 4937.28-2026 即将实施

半导体器件 机械和气候试验方法 第28部分:静电放电(ESD)敏感度测试 带电器件模型(CDM) 器件级

Semiconductor devices—Mechanical and climate test methods—Part 28: Electrostatic discharge (ESD) sensitivity testing—Charged device model (CDM)—device level

ICS: 31.080.01
2026-09-01
GB/T 47239.8-2026 即将实施

半导体器件 柔性可拉伸半导体器件 第8部分:柔性电阻存储器延展性、柔韧性和稳定性测试方法

Semiconductor devices—Flexible and stretchable semiconductor devices—Part 8: Test method for stretchability, flexibility and stability of flexible resistive memory

ICS: 31.080.99
2026-09-01
GB/T 47158-2026 Active

标称电压1000 V以上交流系统用自愈式并联电力电容器

Shunt power capacitors of the self-healing type for AC systems having a rated voltage above 1 000 V

ICS: 31.060.70
2026-06-01
GB/T 38001.63-2026 Active

柔性显示器件 第6-3部分:机械试验方法 撞击和硬度试验

Flexible display devices—Part 6-3: Mechanical test methods—Impact and hardness tests

ICS: 31.120
2026-06-01
GB/T 42706.7-2026 即将实施

电子元器件 半导体器件长期贮存 第7部分:微电子机械器件

Electronic components—Long-term storage of electronic semiconductor devices—Part 7:Micro-electromechanical devices

ICS: 31.020
2026-09-01
GB/T 42706.8-2026 即将实施

电子元器件 半导体器件长期贮存 第8部分:无源电子器件

Electronic components—Long-term storage of electronic semiconductor devices—Part 8:Passive electronic devices

ICS: 31.020
2026-09-01
GB/T 4937.9-2026 即将实施

半导体器件 机械和气候试验方法 第9部分:标志耐久性

Semiconductor devices—Mechanical and climatic test methods—Part 9:Permanence of marking

ICS: 31.080.01
2026-09-01
GB/T 15651.13-2026 即将实施

半导体器件 第5-13部分:光电子器件 LED封装的硫化氢腐蚀试验

Semiconductor devices—Part 5-13:Optoelectronic devices—Hydrogen sulphide corrosion test for LED packages

ICS: 31.080.99
2026-06-01
GB/T 4937.41-2026 即将实施

半导体器件 机械和气候试验方法 第41部分:非易失性存储器可靠性试验方法

Semiconductor devices—Mechanical and climatic test methods—Part 41:Test method for reliability of non-volatile memory devices

ICS: 31.080.01
2026-09-01
GB/T 5078-2026 即将实施

单向引出的电容器和电阻器所需空间的测定方法

Method for the determination of the space required by capacitors and resistors with unidirectional terminations

ICS: 31.020
2026-06-01
GB/T 249-2026 即将实施

半导体分立器件型号命名方法

Rule of type designation for discrete semiconductor devices

ICS: 31.080.01
2026-09-01
GB/T 7581-2026 即将实施

半导体分立器件外形尺寸

Dimensions of outlines for discrete semiconductor devices

ICS: 31.080.01
2026-10-01
GB/T 7576-2026 即将实施

半导体分立器件 大功率双极型晶体管空白详细规范

Discrete semiconductor devices—Blank detail specification for high power bipolar transistors

ICS: 31.080.30
2026-10-01
GB/T 6217-2026 即将实施

半导体分立器件 小功率双极型晶体管空白详细规范

Discrete semiconductor devices—Blank detail specification for low power bipolar transistors

ICS: 31.080.30
2026-10-01
GB/T 4023.1-2026 即将实施

半导体分立器件 第1部分:分规范

Discrete semiconductor devices—Part 1: Sectional specification

ICS: 31.080.01
2026-10-01
Previous Page 66 of 73 Next