Browse Standards

4331+ standards in database

4331 result(s) found

GB/T 24528-2009 Abolished

炭素材料体积密度测定方法

Carbon materials-determination method of the bulk density

ICS: 29.050
2010-05-01
GB/T 24527-2009 Abolished

炭素材料内在水分的测定

Carbon materials-determination moisture in air-dried sample

ICS: 29.050
2010-05-01
GB/T 24526-2009 Active

炭素材料全硫含量测定方法

Carbon materials-determination of the total sulphur content

ICS: 29.050
2010-05-01
GB/T 24525-2009 Active

炭素材料电阻率测定方法

Method for determination of specific resistance of carbon materials

ICS: 29.050
2010-05-01
GB/T 6624-2009 Active

硅抛光片表面质量目测检验方法

Standard method for measuring the surface quality of polished silicon slices by visual inspection

ICS: 29.045
2010-06-01
GB/T 6621-2009 Active

硅片表面平整度测试方法

Testing methods for surface flatness of silicon slices

ICS: 29.045
2010-06-01
GB/T 6618-2009 Active

硅片厚度和总厚度变化测试方法

Test method for thickness and total thickness variation of silicon slices

ICS: 29.045
2010-06-01
GB/T 4061-2009 Active

硅多晶断面夹层化学腐蚀检验方法

Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion

ICS: 29.045
2010-06-01
GB/T 4058-2009 Active

硅抛光片氧化诱生缺陷的检验方法

Test method for detection of oxidation induced defects in polished silicon wafers

ICS: 29.045
2010-06-01
GB/T 24582-2009 Abolished

酸浸取 电感耦合等离子质谱仪测定多晶硅表面金属杂质

Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry

ICS: 29.045
2010-06-01
GB/T 1555-2009 Abolished

半导体单晶晶向测定方法

Testing methods for determining the orientation of a semiconductor single crystal

ICS: 29.045
2010-06-01
GB/T 1554-2009 Active

硅晶体完整性化学择优腐蚀检验方法

Testing method for crystallographic perfection of silicon by preferential etch techniques

ICS: 29.045
2010-06-01
GB/T 1553-2009 Abolished

硅和锗体内少数载流子寿命测定光电导衰减法

Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay

ICS: 29.045
2010-06-01
GB/T 14146-2009 Abolished

硅外延层载流子浓度测定 汞探针电容-电压法

Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method

ICS: 29.045
2010-06-01
GB/T 14141-2009 Active

硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法

Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array

ICS: 29.045
2010-06-01
GB/T 14140-2009 Abolished

硅片直径测量方法

Test method for measuring diameter of semiconductor wafer

ICS: 29.045
2010-06-01
GB/T 14264-2009 Abolished

半导体材料术语

Semiconductor materials-terms and definitions

ICS: 29.045
2010-06-01
GB/T 24625-2009 Abolished

变频器供电同步电动机设计与应用指南

Cuide for the design and application of synchronous motors for converter supply

ICS: 29.160.30
2010-04-01
GB/T 24621.1-2009 Abolished

低压成套开关设备和控制设备的电气安全应用指南 第1部分:成套开关设备

Application guide for electric safety of low-voltage switchgear and controlgear assemblies - Part 1: Switchgear assemblies

ICS: 29.120
2010-04-01
GB/T 13540-2009 Active

高压开关设备和控制设备的抗震要求

Seismic qualification for high-voltage switchgear and controlgear

ICS: 29.130.10
2010-04-01
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